Silicon Carbide Schottky Diode

Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

Silicon Carbide Schottky Diode

Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHOT 1200V 2A TO220-2-1 分立半导体产品 二极管 - 整流器 - 单

5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

Silicon Carbide Schottky Diode

文件：939.68 Kbytes Page：10 Pages