QuickSaver Charge Control IC for Nickel-Cadmium and Nickel-Metal Hydride Batteries

文件：936.82 Kbytes Page：16 Pages

QuickSaver Charge Control IC for Nickel-Cadmium and Nickel-Metal Hydride Batteries

文件：936.82 Kbytes Page：16 Pages

QuickSaver charge control IC for nickel-cadmium and nickel-metal hydride batteries

QuickSaver Charge Control IC for Nickel-Cadmium and Nickel-Metal Hydride Batteries

文件：936.82 Kbytes Page：16 Pages

QuickSaver Charge Control IC for Nickel-Cadmium and Nickel-Metal Hydride Batteries

文件：936.82 Kbytes Page：16 Pages

3.3 and 5.0 Volt MicroMonitor?

DESCRIPTION The DS1707/DS1708 3.3 or 5.0 Volt MicroMonitor monitors three vital conditions for a microprocessor: power supply, voltage sense, and external override. A precision temperature–compensated reference and comparator circuit monitors the status of VCC at the device and at an upstream poi

3.3 and 5.0 Volt MicroMonitor?

DESCRIPTION The DS1707/DS1708 3.3 or 5.0 Volt MicroMonitor monitors three vital conditions for a microprocessor: power supply, voltage sense, and external override. A precision temperature–compensated reference and comparator circuit monitors the status of VCC at the device and at an upstream poi

Integrated Circuit TV Tuner Band Selector

Description: This NTE1708 is a tuner band selector integrated circuit in a 9–Lead SIP type package intended for use in electronic tuning type TV sets. This device outputs supply voltages to the tuner unit according to 2–input band select signals. Features: • 2 Inputs, 4 Outputs • Dec

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) • Low Ciss : Ciss = 730 pF (T

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) • Low Ciss : Ciss = 730 pF (T