| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ICE30N60W | N-Channel Enhancement Mode MOSFET 文件：958.35 Kbytes Page：4 Pages | MICROSS |   | |
ICE30N60W | N-Channel Enhancement Mode MOSFET 文件：589.91 Kbytes Page：8 Pages | ICEMOS Icemos Technology | | |
ICE30N60W | Superjunction MOSFET Gen1 | ICEMOS Icemos Technology | | |
BIDW30N60T Insulated Gate Bipolar Transistor (IGBT) General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris | Bourns 伯恩斯 | | ||
Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode 文件：1.9827 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
ACTIVE / SYNCHRONOUS RECTIFIER 文件：672.35 Kbytes Page：15 Pages | DIODES 美台半导体 | | ||
N-Channel Enhancement Mode MOSFET 文件：281.61 Kbytes Page：4 Pages | DACO 罡境电子 | | ||
N-Channel Enhancement Mode MOSFET 文件：264.01 Kbytes Page：4 Pages | DACO 罡境电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROBINSONNUGE |
24+/25+ |
10 |
原装正品现货库存价优 |
||||
ICE |
23+ |
PLCC-36 |
155 |
专营高频管模块,全新原装! |
|||
ICE |
25+ |
TSOP |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
ICE |
20+ |
PLCC |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON/英飞凌 |
24+ |
TO247 |
19000 |
只做正品原装现货 |
|||
N/A |
24+ |
TO-247 |
60000 |
全新原装现货 |
|||
INFINEON |
23+ |
DIP-8 |
7000 |
||||
robinson |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
N/A |
21+ |
TO-247 |
10000 |
原装现货假一罚十 |
|||
ICE |
2016+ |
PLCC-36 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
ICE30N60W芯片相关品牌
ICE30N60W规格书下载地址
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