位置:HY29F400BT55 > HY29F400BT55详情

HY29F400BT55中文资料

厂家型号

HY29F400BT55

文件大小

509.53Kbytes

页面数量

40

功能描述

4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory

4 Megabit(512Kx8/256Kx16) 5 Volt-only Flash Memory

数据手册

下载地址一下载地址二到原厂下载

简称

HYNIX海力士

生产厂商

Hynix Semiconductor

中文名称

海力士半导体官网

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HY29F400BT55数据手册规格书PDF详情

GENERAL DESCRIPTION

The HY29F400 is a 4 Megabit, 5 volt only CMOS Flash memory organized as 524,288 (512K) bytes or 262,144 (256K) words. The device is offered in industry-standard 44-pin PSOP and 48-pin TSOP packages.

KEY FEATURES

■ 5 Volt Read, Program, and Erase

– Minimizes system-level power requirements

■ High Performance

– Access times as fast as 45 ns

■ Low Power Consumption

– 20 mA typical active read current in byte mode, 28 mA typical in word mode

– 30 mA typical program/erase current

– 5 µA maximum CMOS standby current

■ Compatible with JEDEC Standards

– Package, pinout and command-set compatible with the single-supply Flash device standard

– Provides superior inadvertent write protection

■ Sector Erase Architecture

– Boot sector architecture with top and bottom boot block options available

– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte and seven 64 Kbyte sectors in byte mode

– One 8 Kword, two 4 Kword, one 16 Kword and seven 32 Kword sectors in word mode

– A command can erase any combination of sectors

– Supports full chip erase

■ Erase Suspend/Resume

– Temporarily suspends a sector erase operation to allow data to be read from, or programmed into, any sector not being erased

■ Sector Protection

– Any combination of sectors may be locked to prevent program or erase operations within those sectors

■ Temporary Sector Unprotect

– Allows changes in locked sectors (requires high voltage on RESET# pin)

■ Internal Erase Algorithm

– Automatically erases a sector, any combination of sectors, or the entire chip

■ Internal Programming Algorithm

– Automatically programs and verifies data at a specified address

■ Fast Program and Erase Times

– Byte programming time: 7 µs typical

– Sector erase time: 1.0 sec typical

– Chip erase time: 11 sec typical

■ Data# Polling and Toggle Status Bits

– Provide software confirmation of completion of program or erase operations

■ Ready/Busy# Output (RY/BY#)

– Provides hardware confirmation of completion of program and erase operations

■ 100,000 Program/Erase Cycles Minimum

■ Space Efficient Packaging

– Available in industry-standard 44-pin PSOP and 48-pin TSOP and reverse TSOP packages

HY29F400BT55产品属性

  • 类型

    描述

  • 型号

    HY29F400BT55

  • 制造商

    HYNIX

  • 制造商全称

    Hynix Semiconductor

  • 功能描述

    4 Megabit(512Kx8/256Kx16) 5 Volt-only Flash Memory

更新时间:2025-8-2 10:24:00
供应商 型号 品牌 批号 封装 库存 备注 价格
HYNIX
2016+
TSSOP
6523
只做进口原装现货!假一赔十!
HYNIX
2016+
TSSOP
9000
只做原装,假一罚十,公司可开17%增值税发票!
HYNIX
23+
SOP
5000
原装正品,假一罚十
HYNIX
00+
TSOP48
880000
明嘉莱只做原装正品现货
HYNIX
23+
TSOP48
6000
专业配单保证原装正品假一罚十
HYNIX/海力士
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
HYNIX/海力士
21+
TSSOP
10000
原装现货假一罚十
专营HYNIX
22+
ISSI
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
HY
2025+
TSOP
5378
全新原厂原装产品、公司现货销售
N/A
23+
NA
6500
全新原装假一赔十

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Hynix Semiconductor 海力士半导体

中文资料: 6201条

Hynix Semiconductor,现更名为SK hynix,是一家总部位于韩国的全球领先半导体制造商,成立于1983年。公司主要专注于开发和生产存储器产品,包括动态随机存取存储器(DRAM)、闪存(NAND Flash)和其他半导体组件。SK hynix在电子行业中以其高性能和高容量的存储解决方案而闻名。 作为全球第二大DRAM制造商和第三大NAND Flash制造商,SK hynix在过去几十年中不断进行技术创新和产品开发,以满足不断增长的市场需求。公司致力于研发下一代存储技术,并在智能手机、服务器、个人计算机和数据中心等多个领域提供解决方案。 SK hynix还注重环境可持续性和社会