位置:HY27UF084G2M > HY27UF084G2M详情

HY27UF084G2M中文资料

厂家型号

HY27UF084G2M

文件大小

342.15Kbytes

页面数量

49

功能描述

4Gbit (512Mx8bit) NAND Flash

4Gbit(512Mx8bit) NAND Flash

数据手册

下载地址一下载地址二到原厂下载

生产厂商

HYNIX

HY27UF084G2M数据手册规格书PDF详情

SUMMARY DESCRIPTION

The HYNIX HY27UF084G2M series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

The device contains 4096 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.

A program operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) block.

Data in the page mode can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. This interface allows a reduced pin count and easy migration towards different densities, without any rearrangement of footprint.

FEATURES SUMMARY

HIGH DENSITY NAND FLASH MEMORIES

- Cost effective solutions for mass storage applications

NAND INTERFACE

- x8 width.

- Multiplexed Address/ Data

- Pinout compatibility for all densities

SUPPLY VOLTAGE

- 3.3V device: VCC = 2.7 to 3.6V : HY27UF084G2M

Memory Cell Array

= (2K+ 64) Bytes x 64 Pages x 4,096 Blocks

PAGE SIZE

- x8 device : (2K + 64 spare) Bytes

: HY27UF084G2M

BLOCK SIZE

- x8 device: (128K + 4K spare) Bytes

PAGE READ / PROGRAM

- Random access: 25us (max.)

- Sequential access: 30ns (min.)

- Page program time: 200us (typ.)

COPY BACK PROGRAM MODE

- Fast page copy without external buffering

CACHE PROGRAM MODE

- Internal Cache Register to improve the program throughput

FAST BLOCK ERASE

- Block erase time: 2ms (Typ.)

STATUS REGISTER

ELECTRONIC SIGNATURE

- 1st cycle : Manufacturer Code

- 2nd cycle: Device Code

CHIP ENABLE DONT CARE

- Simple interface with microcontroller

SERIAL NUMBER OPTION

HARDWARE DATA PROTECTION

- Program/Erase locked during Power transitions

DATA INTEGRITY

- 100,000 Program/Erase cycles (with 1bit/512byte ECC)

- 10 years Data Retention

PACKAGE

- HY27UF084G2M-T(P)

: 48-Pin TSOP1 (12 x 20 x 1.2 mm)

- HY27UF084G2M-T (Lead)

- HY27UF084G2M-TP (Lead Free)

- HY27UF084G2M-UP

: 52-ULGA (12 x 17 x 0.65 mm)

- HY27UF084G2M-UP (Lead Free)

HY27UF084G2M产品属性

  • 类型

    描述

  • 型号

    HY27UF084G2M

  • 制造商

    HYNIX

  • 制造商全称

    Hynix Semiconductor

  • 功能描述

    4Gbit(512Mx8bit) NAND Flash

更新时间:2025-11-25 18:12:00
供应商 型号 品牌 批号 封装 库存 备注 价格
HYNIX/海力士
25+
TSOP48
11250
全新原装正品支持含税
HYNIX
25+
TSOP48
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
HYNIX
24+
TSOP48
2000
全新原装深圳仓库现货有单必成
HYNIX
25+
TSOP48
6500
十七年专营原装现货一手货源,样品免费送
HYNIX
24+
TSOP48
7850
只做原装正品现货或订货假一赔十!
HYNIX
25+
TSSOP48
55
原装现货只做自己现货
HYNIX/海力士
2025+
TSOP
5000
原装进口价格优 请找坤融电子!
HYNIX/海力士
2425+
TSOP
18800
只做原装正品,每一片都来自原厂
HYNIX/海力士
21+
TSOP
10000
全新原装 公司现货 价优
HYNIX
15+
TSSOP
11560
全新原装,现货库存,长期供应

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