位置:H5TQ2G83GFR-RDL > H5TQ2G83GFR-RDL详情
H5TQ2G83GFR-RDL中文资料
H5TQ2G83GFR-RDL数据手册规格书PDF详情
FEATURES
• VDD=VDDQ=1.5V +/- 0.075V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13
and 14 supported
• Programmable additive latency 0, CL-1, and CL-2
supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
9 and 10
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 8banks
• Average Refresh Cycle (Tcase 0 oC~ 95 oC)
- 7.8 μs at 0oC ~ 85 oC
- 3.9 μs at 85oC ~ 95 oC
Commercial Temperature( 0oC ~ 95 oC)
Industrial Temperature( -40oC ~ 95 oC)
• JEDEC standard 78ball FBGA(x8), 96ball FBGA(x16)
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• 8 bit pre-fetch
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HYNIX |
23+ |
BGA |
3038 |
原厂原装正品 |
|||
HYNIX |
23+ |
BGA |
30000 |
代理原装现货,价格优势 |
|||
HYNIX |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
Hynix |
2020+ |
DDR3256Mx8PC1066F |
3850 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
HYNIX |
22+ |
BGA |
20000 |
原装正品现货 |
|||
Hynix |
24+ |
原装 |
5850 |
进品原装,现货特卖 |
|||
HYNIX |
24+ |
BGA |
20000 |
低价现货抛售(美国 香港 新加坡) |
|||
HYNIX |
19+ |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
||||
HYNIX |
24+ |
BGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
HYNIX |
22+ |
BGA |
8000 |
原装正品支持实单 |
H5TQ2G83GFR-RDL 资料下载更多...
H5TQ2G83GFR-RDL 芯片相关型号
- 272CCFR.SA.1
- ECS-TCXO-260-BY-TR3
- ECS-TCXO-260-CL-TR
- ECS-TCXO-260-CL-TR3
- H5TQ2G83GFR-H9C
- H5TQ2G83GFR-H9I
- H5TQ2G83GFR-H9J
- H5TQ2G83GFR-H9L
- H5TQ2G83GFR-PBC
- H5TQ2G83GFR-PBI
- H5TQ2G83GFR-PBJ
- H5TQ2G83GFR-PBL
- H5TQ2G83GFR-RDC
- H5TQ2G83GFR-RDI
- H5TQ2G83GFR-RDJ
- H5TQ2G83GFR-TEC
- H5TQ2G83GFR-TEI
- H5TQ2G83GFR-TEJ
- H5TQ2G83GFR-TEL
- H5TQ2G83GFR-XXC
- PMS-D-G
- PZU15DB2
- PZU15DB2/DG
- S020A
- SDT60100CTB
- SDT60100CTB-13
- SDT660VD1
- SDT660VD1-13
- VBA5638
- VBA5638_V01
Datasheet数据表PDF页码索引
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Hynix Semiconductor 海力士半导体
Hynix Semiconductor,现更名为SK hynix,是一家总部位于韩国的全球领先半导体制造商,成立于1983年。公司主要专注于开发和生产存储器产品,包括动态随机存取存储器(DRAM)、闪存(NAND Flash)和其他半导体组件。SK hynix在电子行业中以其高性能和高容量的存储解决方案而闻名。 作为全球第二大DRAM制造商和第三大NAND Flash制造商,SK hynix在过去几十年中不断进行技术创新和产品开发,以满足不断增长的市场需求。公司致力于研发下一代存储技术,并在智能手机、服务器、个人计算机和数据中心等多个领域提供解决方案。 SK hynix还注重环境可持续性和社会