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H5TC4G83CFR-RDJ中文资料
H5TC4G83CFR-RDJ数据手册规格书PDF详情
FEATURES
• VDD=VDDQ=1.35V + 0.100 / - 0.067V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11 and 13
supported
• Programmable additive latency 0, CL-1, and CL-2
supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 8banks
• Average Refresh Cycle (Tcase of 0 oC~ 95 oC)
- 7.8 μs at 0oC ~ 85 oC
- 3.9 μs at 85oC ~ 95 oC
Commercial Temperature( 0oC ~ 95 oC)
Industrial Temperature( -40oC ~ 95 oC)
• JEDEC standard 78ball FBGA(x8), 96ball FBGA (x16)
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• 8 bit pre-fetch
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Hynix |
1844+ |
FBGA |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HYNIX |
23+ |
BGA |
15000 |
一级代理原装现货 |
|||
HYNIX |
21+ |
BGA |
57 |
原装现货假一赔十 |
|||
HYNIX |
24+ |
BGA |
20000 |
只做正品原装现货 |
|||
HYNIX |
2022+ |
BGA |
8000 |
||||
HYNIX |
22+ |
BGA |
28000 |
原装现货只有原装.假一罚十 |
|||
HYNIX |
24+ |
BGA |
60000 |
||||
HYNIX/海力士 |
23+ |
BGA |
3500 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
HYNIX(海力士) |
24+ |
BGA78 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
S000HYNIX |
23+ |
NA |
25630 |
原装正品 |
H5TC4G83CFR-RDJ 资料下载更多...
H5TC4G83CFR-RDJ 芯片相关型号
- H5N2507P
- H5N2522FP-E0-E
- H5N5004PL-E0-E
- H5N5005PL-E0-E
- H5N5016PL-E0-E
- H5TC4G83CFR-RDL
- H5TC4G83CFR-XXA
- H5TC4G83CFR-XXI
- H5TC4G83CFR-XXJ
- H5TC4G83CFR-XXL
- TBLC25-124
- TBLC50
- TBLC50-112
- TBLC50-124
- TBLC75
- TBLC75-112
- TBLC75-124
- TBLC90
- TBLC90-112
- TBLC90-124
- TBU-CA025-050-WH-Q
- TBU-CA025-100-WH-Q
- TBU-CA025-300-WH-Q
- TBU-CA025-500-WH-Q
- TBU-CA025-XXX-WH-Q
- TBU-CA065-050-WH-Q
- TBU-CA065-100-WH-Q
- TBU-CA065-300-WH-Q
- TBU-CA065-500-WH-Q
- TBU-CA-Q
Datasheet数据表PDF页码索引
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Hynix Semiconductor 海力士半导体
Hynix Semiconductor,现更名为SK hynix,是一家总部位于韩国的全球领先半导体制造商,成立于1983年。公司主要专注于开发和生产存储器产品,包括动态随机存取存储器(DRAM)、闪存(NAND Flash)和其他半导体组件。SK hynix在电子行业中以其高性能和高容量的存储解决方案而闻名。 作为全球第二大DRAM制造商和第三大NAND Flash制造商,SK hynix在过去几十年中不断进行技术创新和产品开发,以满足不断增长的市场需求。公司致力于研发下一代存储技术,并在智能手机、服务器、个人计算机和数据中心等多个领域提供解决方案。 SK hynix还注重环境可持续性和社会