General Description

This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast.

Features

• 4.5A, 500V, RDS(on) = 1.5Ω@VGS = 10 V

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• Equivalent Type:IRF830