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HFH20N50中文资料

厂家型号

HFH20N50

文件大小

635.97Kbytes

页面数量

6

功能描述

N-Channel Enhancement Mode Field Effect Transistor

数据手册

下载地址一下载地址二到原厂下载

生产厂商

HUASHAN

HFH20N50数据手册规格书PDF详情

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Features

• 20A, 500V(See Note), RDS(on) <0.26Ω@VGS = 10 V

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• RoHS compliant

更新时间:2025-12-3 14:37:00
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