General Description：

CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is

obtained by the self-aligned planar Technology which reduce the

conduction loss, improve switching performance and enhance

the avalanche energy. The transistor can be used in various

power switching circuit for system miniaturization and

higher efficiency. The package form is TO-252, which accords with

the RoHS standard.

Features：

l Fast Switching

l Low ON Resistance(Rdson≤0.28Ω)

l Low Gate Charge (Typical Data:13nC)

l Low Reverse transfer capacitances(Typical:10pF)

l 100% Single Pulse avalanche energy Test

Applications：

Automotive、DC Motor Control and Class D Amplifier