Description

• Field Effect Transistor.

• Silicon N Channel MOS Type.

• High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

Features

• 4-Volt Gate Drive

• Low Drain-Source On Resistanc - RDS(on)=0.95Ω (Typ.)

• High Forward Transfer Admittance - | Yfs |=4.0S (Typ.)

• Low Leakage Current - IDSS = 300uA (Max.) @VDS = 600V

• Enhancement-Mode - Vth = 1.5~3.5V @VDS = 10V, ID = 1mA