Features

• H10N60F is a High voltage NChannel enhancement mode power MOSFET chip fabricated in advanced silicon epitaxial planar technology

• Advanced termination scheme to provide enhanced voltageblocking capability

• Avalanche Energy Specified

• Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;

• The packaged product is widely used in AC-DC power suppliers, DCDC converters and Hbridge PWM motor drivers

Applications

• Switch Mode Power Supply

• Uninterruptable Power Supply

• High Speed Power Switching