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H04N60E中文资料

厂家型号

H04N60E

文件大小

60.85Kbytes

页面数量

5

功能描述

N-Channel Power Field Effect Transistor

数据手册

下载地址一下载地址二

生产厂商

HSMC

H04N60E数据手册规格书PDF详情

Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.

Features

• Higher Current Rating

• Lower RDS(on)

• Lower Capacitances

• Lower Total Gate Charge

• Tighter VSD Specifications

• Avalanche Energy Specified

H04N60E产品属性

  • 类型

    描述

  • 型号

    H04N60E

  • 制造商

    HSMC

  • 制造商全称

    HSMC

  • 功能描述

    N-Channel Power Field Effect Transistor

更新时间:2026-7-31 10:05:00
供应商 型号 品牌 批号 封装 库存 备注 价格
H
22+
TO-220
6000
十年配单,只做原装