Description

Hewlett-Packard’s ATF-13786 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This device is designed for use in low cost, surface mount oscillators operating over the RF and microwave frequency ranges. The ATF-13786 has sufficient gain for easy use as a negative R cell, without excess gain that can lead to unwanted oscillations and mode jumping. The gate structure used in the fabrication of this device results in phase noise performance superior to that of most other MESFETs.

Features

• Low Cost Surface Mount Plastic Package

• High fMAX: 60 GHz Typical

• Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz Typical

• Output Power at 10 GHz: up to 10 dBm

• Tape-and-Reel Packaging Option Available