Description

The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for use in medium power, wide band

amplifier and oscillator applications operating over VHF, UHF and microwave frequencies.

Features

• High Output Power:

27.5 dBm Typical P1 dB at 2.0␣ GHz

26.5 dBm Typical P1 dB at 4.0␣ GHz

• High Gain at 1 dB Compression:

12.5 dB Typical G1 dBat 2.0␣ GHz

9.5 dB Typical G1 dBat 4.0␣ GHz

• 35 Total Efficiency

• Emitter Ballast Resistors

• Hermetic, Metal/Beryllia Stripline Package