The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ± 10 power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 17 ns at 5 V.

FEATURES

RADIATION

• Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.7 µm Process (Leff = 0.6 µm)

• Total Dose Hardness through 1x106 rad(SiO2)

• Neutron Hardness through 1x1014 cm-2

• Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s

• Dose Rate Survivability through 1x1011 rad(Si)/s

• Soft Error Rate of <1x10-10 upsets/bit-day in Geosynchronous Orbit

• No Latchup

OTHER

• Listed On SMD#5962–95845

• Fast Cycle Times

o ≤ 17 ns (Typical)

o ≤ 25 ns (-55 to 125°C) Read Write Cycle

• Asynchronous Operation

o CMOS or TTL Compatible I/O

• Single 5 V ± 10 Power Supply

• Packaging Options

o 28-Lead CFP (0.500 in. x 0.720 in.)

o 28-Lead DIP, MIL-STD-1835, CDIP2-T28

o 36-Lead CFP—Bottom Braze (0.630 x 0.650 in.)

o 36-Lead CFP—Top Braze (0.630 x 0.650 in.)