DESCRIPTION

The HOA088X/089X series consists of an infrared emitting diode facing an NPN silicon phototransistor encased in a black thermoplastic housing. Phototransistor switching takes place whenever an opaque object passes through the slot between emitter and detector. This series allows the user to choose from available options: (1) mounting tab configuration, (2) detector aperture size, (3) electro-optical characteristics, and (4) housing materials.

FEATURES

• Phototransistor output

• Four mounting configurations

• Accurate position sensing

• 0.125 in.(3.18 mm) slot width

• Choice of detector aperture

• 24.0 in.(610 mm) min. 26 AWG UL 1429 wire leads

• Choice of opaque or IR transmissive housings