General Description

The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifi ers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifi er provides 21 dB of gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifi er is not in use. Internal circuit matching was optimized to provide greater than 40 PAE.

Features

Psat Output Power: +26 dBm

> 40 PAE

Output IP3: +36 dBm

High Gain: 21 dB

Vs: +5V

Ultra Small Package: MSOP8G

Typical Applications

The HMC326MS8G / HMC326MS8GE is ideal for:

• Microwave Radios

• Broadband Radio Systems

• Wireless Local Loop Driver Amplifi er