Description

The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29V51211 are more than 32,113 (98 of all sector address) and less than 32,768 sectors.

Features

• On-board single power supply (VCC): VCC = 2.7 V to 3.6 V

• Organization

- AND Flash Memory: (2048 + 64) bytes × (More than 32,113 sectors)

- Data register: (2048 + 64) bytes

• Multi-level memory cell

- 2 bit/per memory cell

• Automatic programming

- Sector program time: 1.0 ms (typ)

- System bus free

- Address, data latch function

- Internal automatic program verify function

- Status data polling function

• Automatic erase

- Single sector erase time: 1.0 ms (typ)

- System bus free

- Internal automatic erase verify function

- Status data polling function

• Erase mode

- Single sector erase ((2048 + 64) byte unit)

• Fast serial read access time:

- First access time: 50 µs (max)

- Serial access time: 50 ns (max)

• Low power dissipation:

- ICC1 = 2 mA (typ) (Read)

- ICC2 = 20 mA (max) (Read)

- ISB2 = 50 µA (max) (Standby)

- ICC3/ICC4 = 40 mA (max) (Erase/Program)

- ISB3 = 20 µA (max) (Deep standby)

• The following architecture is required for data reliability.

- Error correction: more than 3-bit error correction per each sector read

- Spare sectors: 1.8 (579 sectors) within usable sectors