型号 功能描述 生产厂家&企业 LOGO 操作
HYB514405BJ

1M x 4-Bit Dynamic RAM

The HYB 514405BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 514405BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB

SIEMENS

西门子

1M x 4-Bit Dynamic RAM

The HYB 514405BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 514405BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB

SIEMENS

西门子

1M x 4-Bit Dynamic RAM

The HYB 514405BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 514405BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB

SIEMENS

西门子

1M x 4-Bit Dynamic RAM

The HYB 514405BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 514405BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB

SIEMENS

西门子

1M x 4-Bit Dynamic RAM

The HYB 514405BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 514405BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB

SIEMENS

西门子

1M x 4-Bit Dynamic RAM

The HYB 514405BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 514405BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB

SIEMENS

西门子

1M x 4-Bit Dynamic RAM

The HYB 514405BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 514405BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB

SIEMENS

西门子

HYB514405BJ产品属性

  • 类型

    描述

  • 型号

    HYB514405BJ

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    1M x 4-Bit Dynamic RAM

更新时间:2025-8-16 19:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
SOJ28
574
全新原装进口自己库存优势
模块
1950+
980
只做原装正品现货!或订货假一赔十!
SIEMENS
23+
SOJ20O
65480
Hyinx
24+
TSOP-32
115
Seiman
154
公司优势库存 热卖中!!
SIEMENS
24+
SOJ-28
2250
100%全新原装公司现货供应!随时可发货
Hyinx
2004+
TSOP-32
115
原装现货海量库存欢迎咨询
INFINEON
23+
SOJ
8000
专注配单,只做原装进口现货
INFINEON
23+
SOJ
8000
只做原装现货
INFINEON
23+
SOJ
7000

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