位置：首页 > IC中文资料第5503页 > HY57V641620H
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 |  |   | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | | |
HY57V641620H产品属性
- 类型
描述
- 型号
HY57V641620H
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 1M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ALTERA |
23+ |
65480 |
|||||
HYNIX-专营 |
TSOP54 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Hynix/SK hynix/海力士/海力士半 |
21+ |
TSOP-54 |
724 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HYNIX |
23+ |
TSOP-54 |
30000 |
代理全新原装现货,价格优势 |
|||
HYNIX |
2021+ |
TSOP54 |
6154 |
百分百原装正品 |
|||
HY |
22+23+ |
TSOP |
36980 |
绝对原装正品全新进口深圳现货 |
|||
HY57V641620HGT |
132 |
132 |
|||||
1815+ |
TSOP |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
||||
HYNIX |
2020+ |
TSOP54 |
4743 |
公司主营品牌,全新原装现货超低价! |
|||
HYNIX |
TSOP |
68900 |
原包原标签100%进口原装常备现货! |
HY57V641620H芯片相关品牌
HY57V641620H规格书下载地址
HY57V641620H参数引脚图相关
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- HY57V641620HGT-6
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- HY57V641620HGT-5I
- HY57V641620HGT-55I
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- HY57V641620HGLT-8I
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- HY4903P
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- HY4504P
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