位置:首页 > IC中文资料第5791页 > HY57V641620E
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | |||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | |||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | |||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | |||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | |||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | |||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | |||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | |||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | |||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | |||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | |||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | |||
64MbSynchronousDRAMbasedon1Mx4Bankx16I/O DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf | HynixHynix Semiconductor SK海力士海力士半导体 | |||
4Banksx1Mx16BitSynchronousDRAM DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere | HynixHynix Semiconductor SK海力士海力士半导体 |
HY57V641620E产品属性
- 类型
描述
- 型号
HY57V641620E
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
21+ |
TSSOP54 |
5000 |
全新原装现货 价格优势 |
|||
HYNIX |
2016+ |
TSOP |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
HYNIX |
2020+ |
TSOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Skhynix |
1844+ |
TSOP |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HY |
22+ |
SOT-3508&NBS |
3200 |
全新原装品牌专营 |
|||
SAMSUNG/三星 |
05+ |
TSSOP54 |
880000 |
明嘉莱只做原装正品现货 |
|||
HY |
23+ |
TSOP |
20000 |
原厂原装正品现货 |
|||
SAMSUNG/三星 |
23+ |
TSSOP54 |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
专营HYNIX |
22+ |
专营SAMSUNG |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
SAMSUNG/三星 |
22+ |
TSSOP54 |
6000 |
进口原装 假一罚十 现货 |
HY57V641620E规格书下载地址
HY57V641620E参数引脚图相关
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- HY57V56820CT-8
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- HY57V56820CT
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- HY-5610
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HY57V641620E数据表相关新闻
HY628100A,HY628100ALG-70,HY628100B,HY628100BLLG55
HY628100A,HY628100ALG-70,HY628100B,HY628100BLLG55
2020-1-13HY604808
HY604808,全新原装当天发货或门市自取0755-82732291.
2019-12-12HY57V561620FTP-HI公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21HY57V641620ETP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21HY57V561620FTP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21HY3912W
HY3912W,全新原装当天发货或门市自取0755-82732291.
2019-2-25
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