位置：首页 > IC中文资料第6955页 > HY57V561620LT-H
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V561620LT-H | 4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 |   | |
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 | | ||
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | |
HY57V561620LT-H产品属性
- 类型
描述
- 型号
HY57V561620LT-H
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4Banks x 4M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
24+ |
NA/ |
3405 |
原装现货,当天可交货,原型号开票 |
|||
HYNIX |
2016+ |
TSOP |
8880 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ICS |
23+ |
NA |
3500 |
全新原装假一赔十 |
|||
HYNIX/海力士 |
22+ |
TSOP54 |
100000 |
代理渠道/只做原装/可含税 |
|||
HYNIX/海力士 |
25+ |
TSOP54 |
54658 |
百分百原装现货 实单必成 |
|||
HY |
TSOP54 |
0734+ |
4600 |
全新原装进口自己库存优势 |
|||
HYN |
24+/25+ |
779 |
原装正品现货库存价优 |
||||
HYNIX |
1950+ |
TSOP54 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
HYNIX |
0943+ |
TSSOP54 |
270 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HY |
24+ |
TSOP |
5645 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
HY57V561620LT-H芯片相关品牌
HY57V561620LT-H规格书下载地址
HY57V561620LT-H参数引脚图相关
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HY57V561620LT-H数据表相关新闻
HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55
HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55
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2019-4-21HY3912W
HY3912W，全新原装当天发货或门市自取0755-82732291.
2019-2-25
DdatasheetPDF页码索引
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