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位置：首页 > IC中文资料第9452页 > HY57V561620BT

型号 功能描述 生产厂家&企业 LOGO 操作
HY57V561620

4Banks x 4M x 16Bit Synchronous DRAM

The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po

Hynix

海力士

HY57V561620BT-6I

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BT-8I

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BT-HI

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BT-I

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BT-KI

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BT-PI

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BT-SI

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620B

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BLT-HI

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BLT-KI

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BLT-PI

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BT产品属性

  • 类型

    描述

  • 型号

    HY57V561620BT

  • 功能描述

    16Mx16|3.3V|8K|K|SDR SDRAM - 256M

HY57V561620BT供应商更多...

更新时间：2025-8-11 13:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市益百分电子有限公司
HY57V561620BLTC-10P
HYUNDAI
99+
TSOP54
3560
全新原装进口自己库存优势
询价
深圳市盈慧通电子有限公司
HY57V561620
Atmel(爱特梅尔)
2511
4945
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
深圳市赛美科科技有限公司
HY57V561620BST-H
HYNIX
TSOP
53650
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市润联芯城科技有限公司
HY57V561620BLT-H
HYNIX
23+
TSSOP54
50000
只做原装正品
询价
深圳市卓越微芯电子有限公司
HY57V561620FTP-H
HYNIX
2020+
TSOP
546
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
贸泽芯城（深圳）电子科技有限公司
HY57V561620
HYNIX
23+
TSOP54
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市斌能达电子科技有限公司
HY57V561620FTP-H-A
HYNIX
24+
TSSOP
2000
全新原装深圳仓库现货有单必成
询价
深圳市美思瑞电子科技有限公司
HY57V561620FTP-H-A
HYNIX/海力士
22+
TSOP54
9565
询价
深圳市得捷芯城科技有限公司
HY57V561620FTP-H
SK(海力士)
24+
N/A
9048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
中天科工半导体（深圳）有限公司
HY57V561620FTP-H
HYNIX/海力士
25+
TSOP-54
12496
HYNIX/海力士原装正品HY57V561620FTP-H即刻询购立享优惠#长期有货
询价

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