位置：首页 > IC中文资料第9452页 > HY57V561620BLT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 |   | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | |
HY57V561620BLT产品属性
- 类型
描述
- 型号
HY57V561620BLT
- 功能描述
16Mx16|3.3V|8K|K|SDR SDRAM - 256M
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
2025+ |
TSOP |
3795 |
全新原装、公司现货热卖 |
|||
HYNIX |
24+ |
TSSOP-54 |
159256 |
明嘉莱只做原装正品现货 |
|||
HYNIX/海力士 |
22+ |
TSOP54 |
9565 |
||||
SK(海力士) |
24+ |
N/A |
9048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
HY |
24+ |
TSOP |
210 |
大批量供应优势库存热卖 |
|||
HYINX |
24+ |
TSOP |
54000 |
全新原装现货特价销售,欢迎来电查询 |
|||
Atmel(爱特梅尔) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
HYNIX |
25+23+ |
TSSOP |
39195 |
绝对原装正品全新进口深圳现货 |
|||
HYUNDAI |
17+ |
TSOP54 |
9988 |
只做原装进口,自己库存 |
|||
SKHYNIX/海力士 |
25+ |
TSOP54 |
15000 |
全新原装现货,价格优势。 |
HY57V561620BLT芯片相关品牌
HY57V561620BLT规格书下载地址
HY57V561620BLT参数引脚图相关
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- HY57V561620
- HY57V28820HCT-SI
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HY57V561620BLT数据表相关新闻
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2019-2-25
DdatasheetPDF页码索引
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