位置：首页 > IC中文资料第9452页 > HY57V561620BLT
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 |   | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | |
HY57V561620BLT产品属性
- 类型
描述
- 型号
HY57V561620BLT
- 功能描述
16Mx16|3.3V|8K|K|SDR SDRAM - 256M
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
2016+ |
TSOP |
5000 |
全新原装现货,只售原装,假一赔十! |
|||
HYNIX/海力士 |
25+ |
TSOP-54 |
12496 |
HYNIX/海力士原装正品HY57V561620FTP-H即刻询购立享优惠#长期有货 |
|||
HYNIX |
24+ |
TSSOP-54 |
159256 |
明嘉莱只做原装正品现货 |
|||
HYNIX |
13+ |
TSOP |
638 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HYNIX |
23+ |
TSSOP54 |
50000 |
只做原装正品 |
|||
Atmel(爱特梅尔) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
HYNIX/海力士 |
21+ |
TSSOP |
5000 |
十年专营,原装现货,假一赔十 |
|||
HYUNDAI |
17+ |
TSOP54 |
9988 |
只做原装进口,自己库存 |
|||
HYINX |
24+ |
TSOP |
54000 |
全新原装现货特价销售,欢迎来电查询 |
|||
HYNIX/海力士 |
21+ |
TSOP |
9800 |
只做原装正品假一赔十!正规渠道订货! |
HY57V561620BLT芯片相关品牌
HY57V561620BLT规格书下载地址
HY57V561620BLT参数引脚图相关
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HY57V561620BLT数据表相关新闻
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2019-2-25
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