位置：首页 > IC中文资料第12742页 > HY57V161610
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | Hynix 海力士 |   | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideallysuited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchrono | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideallysuited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchrono | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideallysuited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchrono | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideallysuited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchrono | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideallysuited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchrono | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply | Hynix 海力士 | | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering fully synchronous operati | Hynix 海力士 | |
HY57V161610产品属性
- 类型
描述
- 型号
HY57V161610
- 功能描述
x16 SDRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
24+ |
NA/ |
5029 |
原装现货,当天可交货,原型号开票 |
|||
HYNIX |
2016+ |
TSOP |
8880 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
HYNIX |
2023+ |
TSOP |
8635 |
全新原装正品,优势价格 |
|||
HY |
21+ |
TSOP |
6500 |
只做原装正品假一赔十!正规渠道订货! |
|||
HY |
22+ |
QFN |
100000 |
代理渠道/只做原装/可含税 |
|||
ABOV/现代 |
25+ |
QFN |
54648 |
百分百原装现货 实单必成 |
|||
HYUNDAI |
24+ |
TSSOP |
159269 |
明嘉莱只做原装正品现货 |
|||
HY |
24+ |
TSSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
HYNIX |
25+23+ |
TSOP |
53575 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
HYNIX |
22+ |
TSOP-50 |
8000 |
原装正品支持实单 |
HY57V161610规格书下载地址
HY57V161610参数引脚图相关
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- HY57V161610DTC-7
- HY57V161610DTC7
- HY57V161610DTC-6I
- HY57V161610DTC-6
- HY57V161610DTC-55I
- HY57V161610DTC-55
- HY57V161610DTC-5
- HY57V161610DTC-15
- HY57V161610DTC-10I
- HY57V161610DTC-10
- HY57V161610DTC
- HY57V161610D-I
- HY57V161610D
- HY57V161610BTC-10
- HY57V161610ATC-15
- HY57V161610ATC-12
- HY57V161610ATC-10
- HY57V161610ALTC-15
- HY57V161610ALTC-12
- HY57V161610ALTC-10
- HY57V12420LT-S
- HY57V12420LT-P
- HY57V12420LT-K
- HY57V12420LT-H
- HY57V12420LT-8
- HY57V12420LT-6
- HY57V121620T-S
- HY57V121620T-P
- HY57V121620T-K
- HY57V121620T-H
- HY57V121620T-8
- HY57V121620T-6
- HY57V121620T
- HY57V121620LT-S
- HY57V121620LT-P
- HY57V121620LT-K
- HY57V121620LT-H
- HY57V121620LT-8
- HY57V121620LT-6
- HY57V121620LT
- HY-5610
- HY-53
- HY5204W
- HY5204A
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- HY50-P
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- HY4N65D
- HY4N60T
- HY4N60D
- HY4903P
- HY4903B
- HY46XX
- HY4504W
- HY4504P
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