丝印代码：HY1908；Single N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

Features · 80V/90A, RDS(ON) = mW (typ.) @ VGS =10V · Avalanche Rated · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Power Management for Inverter Systems.

丝印代码：HY1908B；N-Channel Enhancement Mode MOSFET

Features · 80V/90A, RDS(ON) = mW (typ.) @ VGS =10V · Avalanche Rated · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Power Management for Inverter Systems.

丝印代码：HY1908M；N-Channel Enhancement Mode MOSFET

Features · 80V/90A, RDS(ON) = mW (typ.) @ VGS =10V · Avalanche Rated · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Power Management for Inverter Systems.

丝印代码：HY1908P；N-Channel Enhancement Mode MOSFET

Features · 80V/90A, RDS(ON) = mW (typ.) @ VGS =10V · Avalanche Rated · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Power Management for Inverter Systems.

丝印代码：HY1908PF；N-Channel Enhancement Mode MOSFET

Features · 80V/90A, RDS(ON) = mW (typ.) @ VGS =10V · Avalanche Rated · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Power Management for Inverter Systems.

丝印代码：HY1908PM；N-Channel Enhancement Mode MOSFET

Features · 80V/90A, RDS(ON) = mW (typ.) @ VGS =10V · Avalanche Rated · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Power Management for Inverter Systems.

丝印代码：HY1908PS；N-Channel Enhancement Mode MOSFET

Features · 80V/90A, RDS(ON) = mW (typ.) @ VGS =10V · Avalanche Rated · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Power Management for Inverter Systems.

Single N MOSFET(50V~80V)

Single N MOSFET(50V~80V)

Single N MOSFET(50V~80V)

Low-Cost Multichemistry Battery Chargers

General Description The MAX1908/MAX8724/MAX8765/MAX8765A highly integrated, multichemistry battery-charger control ICs simplify the construction of accurate and efficient chargers. These devices use analog inputs to control charge current and voltage, and can be programmed by the host or hardwire

TAPE CARRIER LOW NOISE GaAs FET

DESCRIPTION The MGF1908A is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. The MGF

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Description: The NTE1908 voltage regulator is an inexpensive, easy–to–use device in a TO92 type package suitable for a multitude of applications that require a regulated supply of up to 100mA. This device features internal current limiting and thermal shutdown making the NTE1908 remarkably rugg

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Switching, Inverter Circuit, Interface Circuit and Driver Circuit ● AEC-Q101 Qualified (Note1) ● Including two devices in US6 (ultra super mini type with 6 leads). ● With built-in bias resistors. ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process and miniaturize

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DESCRIPTION The TDA1908 is a monolithic integrated circuit in 12 lead quad in-line plastic package intended for low frequency power applications.The mounting is compatible with the old types TBA800, TBA810S, TCA830S and TCA940N. Its main features are: – flexibility in use with a max output