N-Channel Enhancement Mode MOSFET

Features 40V/80A, RDS(ON)=4.0 m2 (typ.) @VGs=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)

丝印代码：HY1804；N-Channel Enhancement Mode MOSFET

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Single N MOSFET(12V~40V)

N-Channel Enhancement Mode MOSFET

Features 40V/80A, RDS(ON)=4.0 m2 (typ.) @VGs=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)

1.8 GHz LOW NOISE AMPLIFIER AND DOWNMIXER GaAs MONOLITHIC INTEGRATED CIRCUIT

Designed primarily for use in DECT, Japan Personal Handy Phone (JPHP), and other wireless Personal Communication Systems (PCS) applications. The MRFIC1804 includes a low noise amplifier and downmixer in a low-cost SOIC-16 package. The integrated circuit requires minimal off-chip matching while all

Integrated Circuit Vertical Deflection Circuit for Large Screen TV

Description: The NTE1804 is an integrated circuit in a 13–Lead SIP type package designed for vertical deflection in video monitors and large screen color television receivers, e.g. 30AX and PIL–S4 systems. Features: Oscillator; Switch Capability for 50Hz/60Hz Operation Synchronizatio

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1804 is a switching device which can be driven directly by a 4.5 V power source. The µPA1804 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages