丝印代码：HY1620；N-Channel Enhancement Mode MOSFET

文件：635.68 Kbytes Page：11 Pages

丝印代码：HY1620；N-Channel Enhancement Mode MOSFET

文件：635.68 Kbytes Page：11 Pages

丝印代码：HY1620B；N-Channel Enhancement Mode MOSFET

文件：4.35087 Mbytes Page：11 Pages

丝印代码：HY1620P；N-Channel Enhancement Mode MOSFET

文件：4.35087 Mbytes Page：11 Pages

场效应管(MOSFET)

Single N MOSFET(150V~300V)

Single N MOSFET(150V~300V)

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

SWITCHMOOE POWER RECTIFIERS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Popular TO-220 Package •

ULTRAFAST RECTIFIER 16 AMPERES 200 VOLTS

  SWITCHMODETM Dual Ultrafast Power Rectifier    . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave bridge. These stat

ULTRAFAST RECTIFIER 16 AMPERES 200 VOLTS

SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Package Designed for Power Surface Mount Applications • Ultrafast 35 Nanosecond Recove

Integrated Circuit B/W TV Video IF Amplifier, RF AGC Circuit

Description: The NTE1620 is an integrated circuit in a 9–Lead SIP type package designed for use as a B/W TV video IF amplifier and RF AGC circuit. Typical applications inclued low voltage operation (6V) and small B/W TVs. Features: • Low Voltage Operation Video IF Circuit with Minimum N

D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 16.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MILS-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge