位置：首页 > IC中文资料第4250页 > HUFA75829D3S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HUFA75829D3S | 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs Features • Ultra Low On-Resistance - rDS(ON) = 0.110Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs Features • Ultra Low On-Resistance - rDS(ON) = 0.110Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET Features • Ultra Low On-Resistance - rDS(ON) = 0.110Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve | Intersil | | ||
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET Features • Ultra Low On-Resistance - rDS(ON) = 0.110Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET Features • Ultra Low On-Resistance - rDS(ON) = 0.110Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET Features • Ultra Low On-Resistance - rDS(ON) = 0.110Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve | Intersil | |
HUFA75829D3S产品属性
- 类型
描述
- 型号
HUFA75829D3S
- 功能描述
MOSFET 18a 150V N-Ch 0.110 Ohm UltraFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild/ON |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD/仙童 |
23+ |
TO-TO-220 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
VBsemi |
24+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
FAIRCHILD |
08+ |
SOP8 |
3300 |
全新原装现货100真实自己公司 |
|||
FSC/ON |
23+ |
原包装原封□□ |
6317 |
原装进口特价供应特价，原装元器件供应，支持开发样品更多详细咨询库存 |
|||
VBsemi |
24+ |
TO252 |
8000 |
新到现货，只做全新原装正品 |
|||
VBSEMI/台湾微碧 |
24+ |
TO252 |
60000 |
全新原装现货 |
|||
FAIRCHILD/仙童 |
23+ |
SOT252 |
7000 |
||||
FAIRCHILD/仙童 |
23+ |
SOT252 |
6000 |
原装正品，支持实单 |
|||
FAIRCHILD/仙童 |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
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HUFA75829D3S规格书下载地址
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HUFA75829D3S数据表相关新闻
HUFA76645S3ST
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2021-11-9HV111-浪涌限制器/断路器/热交换控制器IC
特点 无需外接部件 董事会80V，2A MOSFET 没有Rsense的需要 ± 8.0V至± 80V的输入电压范围 二级电流限制 1.2A初始浪涌电流极限 2.0A二浪涌电流极限/断路器触发伺服TOC限制1.2A，然后关闭 快速响应电流限制时，在输入电压过电流或步骤（如二极管OR'ing） UVLO /启用与上电复位监控电路 可编程欠压锁定 过电流保护 9.0sec自动重试 内置滞后热关机 80V漏
2013-1-6HV100-3针热插拔，浪涌电流限制器控制器
特点 33％，比SOT- 232的小型 通行证元素是唯一的外部部分 没有意义的电阻 自动适应*通元 短路保护* 紫外线和POR监控电路 2.5S自动重试 ±10V至±72V输入电压范围 0.6毫安典型工作电源电流 内置交流干扰路径打开钳 应用 - 48V局端交换（线卡） +48 V的服务器网络 +48 V的存储区域网络 +48 V的外围设备，路由器，交换机 +2
2013-1-6
DdatasheetPDF页码索引
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