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HUFA75639S3ST价格
参考价格：￥7.0218
型号：HUFA75639S3ST 品牌：Fairchild 备注：这里有HUFA75639S3ST多少钱，2025年最近7天走势，今日出价，今日竞价，HUFA75639S3ST批发/采购报价，HUFA75639S3ST行情走势销售排行榜，HUFA75639S3ST报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HUFA75639S3ST | 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 |   | |
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 m廓 文件：532.95 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | |
HUFA75639S3ST产品属性
- 类型
描述
- 型号
HUFA75639S3ST
- 功能描述
MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2023+ |
TO-263 |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
onsemi(安森美) |
24+ |
TO-263 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VBsemi |
24+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
ON/安森美 |
25+ |
TO-263 |
860000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
23+ |
TO-263 |
7000 |
||||
ON/安森美 |
21+ |
TO263 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
VBsemi |
21+ |
TO263 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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HUFA75639S3ST数据表相关新闻
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2021-11-9HV111-浪涌限制器/断路器/热交换控制器IC
特点 无需外接部件 董事会80V，2A MOSFET 没有Rsense的需要 ± 8.0V至± 80V的输入电压范围 二级电流限制 1.2A初始浪涌电流极限 2.0A二浪涌电流极限/断路器触发伺服TOC限制1.2A，然后关闭 快速响应电流限制时，在输入电压过电流或步骤（如二极管OR'ing） UVLO /启用与上电复位监控电路 可编程欠压锁定 过电流保护 9.0sec自动重试 内置滞后热关机 80V漏
2013-1-6HV100-3针热插拔，浪涌电流限制器控制器
特点 33％，比SOT- 232的小型 通行证元素是唯一的外部部分 没有意义的电阻 自动适应*通元 短路保护* 紫外线和POR监控电路 2.5S自动重试 ±10V至±72V输入电压范围 0.6毫安典型工作电源电流 内置交流干扰路径打开钳 应用 - 48V局端交换（线卡） +48 V的服务器网络 +48 V的存储区域网络 +48 V的外围设备，路由器，交换机 +2
2013-1-6
DdatasheetPDF页码索引
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