位置：首页 > IC中文资料第1787页 > HUFA75639P3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HUFA75639P3 | 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 |   | |
HUFA75639P3 | MOSFET N-CH 100V 56A TO-220AB | ONSEMI 安森美半导体 | | |
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 m廓 文件：532.95 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | |
HUFA75639P3产品属性
- 类型
描述
- 型号
HUFA75639P3
- 功能描述
MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO263 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
F |
23+ |
TO-263A |
8650 |
受权代理!全新原装现货特价热卖! |
|||
ON Semiconductor |
21+ |
D2PAK(TO-263AB) |
400 |
进口原装!长期供应!绝对优势价格(诚信经营)!! |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
18500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON/安森美 |
2023+ |
TO-263 |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
FAIRCHILD |
24+ |
TO-220 |
8866 |
||||
FSC |
1029 |
1011 |
原装正品 |
||||
ON/安森美 |
21+ |
TO263 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
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HUFA75639P3数据表相关新闻
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2021-11-9HV111-浪涌限制器/断路器/热交换控制器IC
特点 无需外接部件 董事会80V，2A MOSFET 没有Rsense的需要 ± 8.0V至± 80V的输入电压范围 二级电流限制 1.2A初始浪涌电流极限 2.0A二浪涌电流极限/断路器触发伺服TOC限制1.2A，然后关闭 快速响应电流限制时，在输入电压过电流或步骤（如二极管OR'ing） UVLO /启用与上电复位监控电路 可编程欠压锁定 过电流保护 9.0sec自动重试 内置滞后热关机 80V漏
2013-1-6HV100-3针热插拔，浪涌电流限制器控制器
特点 33％，比SOT- 232的小型 通行证元素是唯一的外部部分 没有意义的电阻 自动适应*通元 短路保护* 紫外线和POR监控电路 2.5S自动重试 ±10V至±72V输入电压范围 0.6毫安典型工作电源电流 内置交流干扰路径打开钳 应用 - 48V局端交换（线卡） +48 V的服务器网络 +48 V的存储区域网络 +48 V的外围设备，路由器，交换机 +2
2013-1-6
DdatasheetPDF页码索引
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