位置：首页 > IC中文资料第4250页 > HUFA75329D3ST
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
20A,55V,0.026Ohm,N-ChannelUltraFETPowerMOSFETs TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET®process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   | |
20A,55V,0.026Ohm,N-ChannelUltraFETPowerMOSFETs TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET™process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
20A,55V,0.026Ohm,N-ChannelUltraFETPowerMOSFETs TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET®process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
20A,55V,0.026Ohm,N-ChannelUltraFETPowerMOSFETs TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET™process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
N-ChannelUltraFETPowerMOSFET55V,20A,26m廓 文件：665.88 Kbytes Page：11 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
HUFA75329D3ST产品属性
- 类型
描述
- 型号
HUFA75329D3ST
- 功能描述
MOSFET 20a 55V N-Channel UltraFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
FAIRCHILD/仙童 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
onsemi |
23+ |
TO-252AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
FAIRC |
2020+ |
TO-252(DPAK) |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
FAIRCHILD |
360000 |
原厂原装 |
1305 |
||||
FAIRCHILD/仙童 |
24+ |
TO252 |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
20+/21+ |
TO-252 |
9500 |
全新原装进口价格优势 |
|||
ON/安森美 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
FAIRCHILD/仙童 |
23+ |
SOT252 |
6000 |
原装正品，支持实单 |
HUFA75329D3ST芯片相关品牌
HUFA75329D3ST规格书下载地址
HUFA75329D3ST参数引脚图相关
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HUFA75329D3ST数据表相关新闻
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2021-11-9HV111-浪涌限制器/断路器/热交换控制器IC
特点无需外接部件董事会80V，2AMOSFET没有Rsense的需要±8.0V至±80V的输入电压范围二级电流限制1.2A初始浪涌电流极限2.0A二浪涌电流极限/断路器触发伺服TOC限制1.2A，然后关闭快速响应电流限制时，在输入电压过电流或步骤（如二极管OR'ing）UVLO/启用与上电复位监控电路可编程欠压锁定过电流保护9.0sec自动重试内置滞后热关机80V漏
2013-1-6HV100-3针热插拔，浪涌电流限制器控制器
特点33％，比SOT-232的小型通行证元素是唯一的外部部分没有意义的电阻自动适应*通元短路保护*紫外线和POR监控电路2.5S自动重试±10V至±72V输入电压范围0.6毫安典型工作电源电流内置交流干扰路径打开钳应用-48V局端交换（线卡）+48V的服务器网络+48V的存储区域网络+48V的外围设备，路由器，交换机+2
2013-1-6
DdatasheetPDF页码索引
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