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HUF75329D价格
参考价格：￥2.5489
型号：HUF75329D3ST 品牌：Fairchild Semiconductor 备注：这里有HUF75329D多少钱，2026年最近7天走势，今日出价，今日竞价，HUF75329D批发/采购报价，HUF75329D行情走势销售排行榜，HUF75329D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil |   | ||
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 30A RDS(ON) | Bychip 百域芯 | | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 55V(Min) · Static Drain-Source On-Resistance -RDS(on) = 26mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive · Half Bridge · PFC and Other Boost Converter · Buck Converterh | ISC 无锡固电 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 30A RDS(ON) | Bychip 百域芯 | | ||
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs | ONSEMI 安森美半导体 | | ||
N 沟道，UltraFET 功率 MOSFET，55V，20A，26mΩ | ONSEMI 安森美半导体 | | ||
N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 m廓 文件：665.88 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 m廓 文件：665.88 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | |
HUF75329D产品属性
- 类型
描述
- 型号
HUF75329D
- 功能描述
MOSFET 20a 55V N-Channel UltraFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC/ON |
23+ |
原包装原封 □□ |
32175 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
FAIRCHIL |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
FAIRCHILD |
2013 |
TO-252 |
10 |
全新原装正品现货 |
|||
FAIRCHILD/仙童 |
22+ |
TO252 |
12245 |
现货,原厂原装假一罚十! |
|||
F |
23+ |
TO/252 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
FAIRCHILD/仙童 |
24+ |
TO252 |
9600 |
原装现货,优势供应,支持实单! |
|||
FAIRCHILD |
20+ |
TO-2523L(DPAK) |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
FAIRCHILD/仙童 |
23+ |
TO252 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
三年内 |
1983 |
只做原装正品 |
HUF75329D芯片相关品牌
HUF75329D规格书下载地址
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HUF75329D数据表相关新闻
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全新原装现货供应 0755-82538863 15820431872 QQ:1134344845
2019-2-23
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