位置：首页 > IC中文资料 > HTT055R1JPC
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
25A,60V,0.020Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   | |
70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscom | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
H |
21+ |
TO-220 |
645 |
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AMP |
2308+ |
193187 |
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ISL |
05+ |
原厂原装 |
4302 |
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SENSITRO |
24+25+/26+27+ |
TO-59.高频管 |
18800 |
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H |
18+ |
TO-220 |
185 |
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ISL |
23+ |
65480 |
|||||
AMIS |
22+ |
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2000 |
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|||
H |
QQ咨询 |
TO-220 |
64 |
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H |
23+ |
TO-220 |
66800 |
现货正品专供军研究院 |
|||
H |
2318+ |
TO-220 |
4862 |
只做进口原装!假一赔百!自己库存价优! |
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HTT055R1JPC数据表相关新闻
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2019-2-23
DdatasheetPDF页码索引
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