丝印代码：A2*；Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detectin

Surface Mount RF Schottky Barrier Diodes High Breakdown Voltage

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica tions and package con figura tions to give the designer wide flexi bility. The HSMS-280x series of diodes is optimized for high voltage a

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica tions and package con figura tions to give the designer wide flexi bility. The HSMS-280x series of diodes is optimized for high voltage a

Surface Mount RF Schottky Barrier Diodes

Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica tions and package con figura tions to give the designer wide flexi bility. The HSMS-280x series of diodes is optimized for high voltage a

低反向漏电肖特基二极管

通用肖特基二极管采用广泛的封装配置。经过优化而适合高电压钳位或模拟直流开关应用。对于低击穿应用，如同探测器或混频器一样，请参考 HSMS-282X。对于低闪烁 (1/F) 噪音应用，请参考 HSMS-281X。VBR=70 V，CT=2.0pF，RD=35Ohm，Vf @ 1mA=410mV。;

Surface Mount RF Schottky Barrier Diodes

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Surface Mount RF Schottky Barrier Diodes

文件：196.55 Kbytes Page：10 Pages

Surface Mount RF Schottky Barrier Diodes

文件：196.56 Kbytes Page：10 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF DIODE SCHOTTKY 70V SOT23-3 分立半导体产品 二极管 - 射频

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：RF DIODE SCHOTTKY 70V SOT23-3 分立半导体产品 二极管 - 射频

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 5 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Good radiant power output linearity with respect to input current ● Long lifet

EIGHT DARLINGTON ARRAYS

Description The ULQ2801A-ULQ2804A each contain eight Darlington transistors with common emitters and integral suppression diodes for inductive loads. Each Darlington features a peak load current rating of 600 mA (500 mA continuous) and can withstand at least 50 V in the off state. Outputs may be

Low-Power BiCMOS Current-Mode PWM

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Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages