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位置：首页 > IC中文资料第10298页 > HSB

HSB价格

参考价格：￥0.3250

型号：HSB0104YPTR 品牌：HITACHI 备注：这里有HSB多少钱，2024年最近7天走势，今日出价，今日竞价，HSB批发/采购报价，HSB行情走势销售排行榜，HSB报价。
型号 功能描述 生产厂家&企业 LOGO 操作
HSB

Bolt-down Fuses

文件：155.55 Kbytes Page：1 Pages

LittelfuseLittelfuse Inc.

力特富斯（Littelfuse）力特公司

Littelfuse
HSB

SOI Complementary Bipolar Process

文件：72.67 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
HSB0104YP

Silicon Schottky Barrier Diode for High Speed Switching

Features •Canbeusedforprotectionofsignal-buslines. •Themountingefficiencyhasbeenimprovedbyincorporating twolow-lossdiodeelementintoaCMPAK-4package.

HitachiHitachi, Ltd.

日立公司

Hitachi
HSB0104YP

Silicon Schottky Barrier Diode for High Speed Switching

Features •Canbeusedforprotectionofsignal-buslines. •Themountingefficiencyhasbeenimprovedbyincorporating twolow-lossdiodeelementintoaCMPAK-4package.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
HSB02-101007

HEAT SINK

FEATURES •BGAdesign •smallfootprint •aluminumalloy •blackanodizedfinish

CUID

CUI Devices

CUID
HSB03-141406

HEAT SINK

FEATURES •BGAdesign •smallfootprint •aluminumalloy •blackanodizedfinish

CUID

CUI Devices

CUID
HSB10-232306

HEAT SINK

FEATURES •BGAdesign •topmount •aluminumalloy •blackanodizedfinish

CUID

CUI Devices

CUID
HSB1109

PNP EPITAXIAL PLANAR TRANSISTOR

Features •Lowfrequencyhighvoltageamplifier •ComplementarypairwithHSD1609

HSMC

华昕

HSMC
HSB1109S

PNP EPITAXIAL PLANAR TRANSISTOR

Description TheHSB1109SisdesignedforlowfrequencyandhighvoltageamplifierapplicationscomplementarypairwithHSD1609S.

HSMC

华昕

HSMC
HSB1386A

LOW FREQUENCY TRANSISTOR (-20V, -4A)

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

HSMC

华昕

HSMC
HSB1386I

LOW FREQUENCY TRANSISTOR (-20V,-4A)

Features •LowVCE(sat). VCE(sat)=-0.55V(Typ.)(IC/IB=-4A/-0.1A) •ExcellentDCcurrentgaincharacteristics. Structure EpitaxialplanartypePNPsilicontransistor

HSMC

华昕

HSMC
HSB1386J

LOW FREQUENCY TRANSISTOR (-20V, -4A)

Features •LowVCE(sat). VCE(sat)=-0.55V(Typ.)(IC/IB=-4A/-0.1A) •ExcellentDCcurrentgaincharacteristics. Structure EpitaxialplanartypePNPsilicontransistor

HSMC

华昕

HSMC
HSB1426

PNP EPITAXIAL PLANAR TRANSISTOR

Description DC-DCConverter Features •LowCollectortoEmitterSaturationVoltage

HSMC

华昕

HSMC
HSB226S

Silicon Schottky Barrier Diode

SiliconSchottkyBarrierDiode Features •Lowreversecurrent,Lowcapacitance. •CMPAKPackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

Hitachi
HSB226S

Silicon Schottky Barrier Diode for High Speed Switching

SiliconSchottkyBarrierDiodeforHighSpeedSwitching Features •Lowreversecurrent,Lowcapacitance. •CMPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
HSB226WK

SILICON SCHOTTKY BARRIER DIODE

Features •Lowreversecurrent,Lowcapacitance. •CMPAKPackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

Hitachi
HSB226WK

Silicon Schottky Barrier Diode for High Speed Switching

Features •Lowreversecurrent,Lowcapacitance. •CMPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
HSB226YP

Silicon Schottky Barrier Diode for High Speed Switching

Features •Lowreversecurrent,Lowcapacitance. •CMPAK-4Packageissuitableforhighdensitysurfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
HSB226YP

Silicon Schottky Barrier Diode

Features •Lowreversecurrent,Lowcapacitance. •CMPAK-4Packageissuitableforhighdensitysurfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

Hitachi
HSB276AS

Silicon Schottky Barrier Diode for Balanced Mixer

Features •Highforwardcurrent,Lowcapacitance. •HSB276ASwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. •CMPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

Hitachi
HSB276AS

Silicon Schottky Barrier Diode for Balanced Mixer

Features •Highforwardcurrent,Lowcapacitance. •HSB276ASwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. •CMPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
HSB276AS

Silicon Schottky Barrier Diode

Features •Highforwardcurrent,Lowcapacitance. •HSB276ASwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. •CMPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
HSB276AYP

SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING

Features •Highforwardcurrent,Lowcapacitance. •CMPAK-4Packageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

Hitachi
HSB276AYP

Silicon Schottky Barrier Diode for High Speed Switching

Features •Highforwardcurrent,Lowcapacitance. •CMPAK-4Packageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
HSB276S

Silicon Schottky Barrier Diode for Balanced Mixer

Features •Highforwardcurrent,Lowcapacitance. •HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

Hitachi
HSB276S

Silicon Schottky Barrier Diode for Detector and Mixer

Features •Highforwardcurrent,Lowcapacitance. •HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
HSB276S

Silicon Schottky Barrier Diode

Features ●Highforwardcurrent,Lowcapacitance. ●HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. ●CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
HSB278S

Silicon Schottky Barrier Diode for High Speed Switching

Features •Lowforwardvoltage,Lowcapacitance. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

Hitachi
HSB278S

Silicon Schottky Barrier Diode for Detector

Features •Lowforwardvoltage,Lowcapacitance. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
HSB562

PNP EPITAXIAL PLANAR TRANSISTOR

Description TheHSB562isdesignedforgeneralpurposelowfrequencypoweramplifierapplications.

HSMC

华昕

HSMC
HSB564A

PNP EPITAXIAL PLANAR TRANSISTOR

Description TheHSB564Aisdesignedforgeneralpurposelowfrequencypoweramplifierapplications. AbsoluteMaximumRatings •MaximumTemperatures StorageTemperature...........................................................-55~+150°C JunctionTemperature...............

HSMC

华昕

HSMC
HSB647A

SILICON PNP EPITAXIAL

Description LowFrequencyPowerAmplifierComplementaryPairWithHSD667A.

HSMC

华昕

HSMC
HSB649A

SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Description LowfrequencypoweramplifiercomplementarypairwithHSD669A. AbsoluteMaximumRatings(Ta=25°C) •MaximumTemperatures StorageTemperature............................................................................................-55~+150°C JunctionTempera

HSMC

华昕

HSMC
HSB649T

SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Description Lowfrequencypoweramplifier.

HSMC

华昕

HSMC
HSB764

PNP EPITAXIAL PLANAR TRANSISTOR

Description Voltageregulator,Relaydriver,electricalequipmentapplication.

HSMC

华昕

HSMC
HSB772

PNP EPITAXIAL PLANAR TRANSISTOR

Description TheHSB772isdesignedforusinginoutputstageof1waudioamplifier,voltageregulator,DC-DCconverterandrelaydriver. AbsoluteMaximumRatings(Ta=25°C) •MaximumTemperatures StorageTemperature..............................................................................

HSMC

华昕

HSMC
HSB772S

PNP EPITAXIAL PLANAR TRANSISTOR

Description TheHSB772Sisdesignedforusinginoutputstageof0.75Wamplifier,voltageregulator,DC-DCconverteranddriver.

HSMC

华昕

HSMC
HSB-800I-A11

ISA Half-Size SBC with AMD Geode™ LX800 Processor

Features ■AMDGeode™LX800Processor ■AMDGeode™LX800+CS5536 ■OnboardDDR400MHz,Upto128MB ■10/100Base-TXEthernetx1orGigabitEthernetx1(Optional) ■Integrated2DGraphicsAccelerator,VGASupport,CRT,TFT/LVDS Support ■AC97CodecAudio ■UltraATA33x1,CompactFlash

AAEONAAEON Technology

研扬科技研扬科技（苏州）有限公司

AAEON
HSB-800I-A11-VE-0001

ISA Half-Size SBC with AMD Geode™ LX800 Processor

Features ■AMDGeode™LX800Processor ■AMDGeode™LX800+CS5536 ■OnboardDDR400MHz,Upto128MB ■10/100Base-TXEthernetx1orGigabitEthernetx1(Optional) ■Integrated2DGraphicsAccelerator,VGASupport,CRT,TFT/LVDS Support ■AC97CodecAudio ■UltraATA33x1,CompactFlash

AAEONAAEON Technology

研扬科技研扬科技（苏州）有限公司

AAEON
HSB-800I-A11-VG-0001

ISA Half-Size SBC with AMD Geode™ LX800 Processor

Features ■AMDGeode™LX800Processor ■AMDGeode™LX800+CS5536 ■OnboardDDR400MHz,Upto128MB ■10/100Base-TXEthernetx1orGigabitEthernetx1(Optional) ■Integrated2DGraphicsAccelerator,VGASupport,CRT,TFT/LVDS Support ■AC97CodecAudio ■UltraATA33x1,CompactFlash

AAEONAAEON Technology

研扬科技研扬科技（苏州）有限公司

AAEON
HSB83

Silicon Epitaxial Planar Diode for High Voltage Switching

Features •Highreversevoltage.(VR=250V) •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

Hitachi
HSB83

Silicon Epitaxial Planar Diode for High Voltage Switching

Features •Highreversevoltage.(VR=250V) •CMPAKpackageissuitableforhighdensitysurface mountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
HSB83YP

Silicon Epitaxial Planar Diode for High Voltage Switching

Features •Highreversevoltage.(VR=250V) •CMPAK-4packagewhichhastwodevicesparallelconnection, issuitableforhighdensitysurfacemounting.

HitachiHitachi, Ltd.

日立公司

Hitachi
HSB83YP

Silicon Epitaxial Planar Diode for High Voltage Switching

Features •Highreversevoltage.(VR=250V) •CMPAK-4packagewhichhastwodevicesparallelconnection, issuitableforhighdensitysurfacemounting.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
HSB857

PNP EPITAXIAL PLANAR TRANSISTOR

Description Lowfrequencypoweramplifier.

HSMC

华昕

HSMC
HSB857D

PNP EPITAXIAL PLANAR TRANSISTOR

Description Lowfrequencypoweramplifier.

HSMC

华昕

HSMC
HSB857J

PNP EPITAXIAL PLANAR TRANSISTOR

Description Lowfrequencypoweramplifier.

HSMC

华昕

HSMC
HSBD135

NPN SILICON TRANSISTOR

APPLICATIONS MediumPowerLinearswitchingApplications

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan
HSBD136

PNP SILICON TRANSISTOR

APPLICATIONS MediumPowerLinearswitchingApplications

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan
HSBD137

NPN SILICON TRANSISTOR

APPLICATIONS MediumPowerLinearswitchingApplications

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan
HSBD138

PNP SILICON TRANSISTOR

APPLICATIONS MediumPowerLinearswitchingApplications

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan
HSBD139

NPN SILICON TRANSISTOR

APPLICATIONS MediumPowerLinearswitchingApplications

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan
HSBD140

PNP SILICON TRANSISTOR

APPLICATIONS MediumPowerLinearswitchingApplications

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan
HSBD175

NPN SILICON TRANSISTOR

APPLICATIONS MediumPowerLinearswitchingApplications

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan
HSBD176

PNP SILICON TRANSISTOR

APPLICATIONS MediumPowerLinearswitchingApplications

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan
HSBD177

NPN SILICON TRANSISTOR

█APPLICATIONS MediumPow)erLinearswitchingApplications

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan
HSBD178

PNP SILICON TRANSISTOR

APPLICATIONS MediumPowerLinearswitchingApplications

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan
HSBD179

NPN SILICON TRANSISTOR

APPLICATIONS MediumPowerLinearswitchingApplications

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan
HSBD180

PNP SILICON TRANSISTOR

APPLICATIONS MediumPowerLinearswitchingApplications

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan
HSBD234

PNP SILICON TRANSISTOR

APPLICATIONS MediumPowerLinearswitchingApplications

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan

HSB产品属性

  • 类型

    描述

  • 型号

    HSB

  • 制造商

    LITTELFUSE

  • 制造商全称

    Littelfuse

  • 功能描述

    Bolt-down Fuses

HSB供应商更多...

更新时间：2024-6-21 14:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
千层芯半导体(深圳)有限公司
HSB-5-3-OVP
MINI
2018+
SMD
3600
MINI专营品牌全新原装正品假一赔十
询价
深圳市芯福林电子科技有限公司
HSB83YPTR-E
RENESAS/瑞萨
21+
SOT343
13880
公司只售原装,支持实单
询价
深圳市科思奇电子科技有限公司
HSB649A-C
HX华晰
22+
TO-126
360000
进口原装房间现货实库实数
询价
深圳市惊羽科技有限公司
HSB83YP-JTR-E
CONEXANT
24+25+/26+27+
TVS二极管
36218
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
深圳市润联芯城科技有限公司
HSB2838
HITACHI/日立
23+
SOT-323
50000
原装正品 支持实单
询价
柒号芯城电子商务(深圳)有限公司
HSBA15810C
HUASHUO(华朔)
23+
PQFN-8(5x6
700000
公主请下单 柒号只做原装
询价
深圳市纳艾斯科技有限公司
HSB772-P
华昕
2020+
TO126
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
上海专毅电子科技有限公司
HSB88WSTR
HITACHI
17+
SMD/8
11950
只做全新进口原装,现货库存
询价
中天科工半导体（深圳）有限公司
HSB0104YPTR
量大可定RENESAS
20+
SOT343
49000
原装优势主营型号-可开原型号增税票
询价
深圳市恒达亿科技有限公司
HSB-ARA65-SN15A-FAK3
DDK
23+
SMD
3200
全新原装、诚信经营、公司现货销售
询价

HSB芯片相关品牌

  • AAC
  • AITSEMI
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  • BITECH
  • DBLECTRO
  • HUAXINAN
  • MOLEX3
  • Nuvoton
  • OSRAM
  • RECOM
  • SIEMENS
  • WILLOW

HSB规格书下载地址

HSB参数引脚图相关

HSB数据表相关新闻

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    双抗辐射，非反相功率MOSFET驱动器辐射硬化的Hs4424RH和HS-4424BRH是非相，双，单片高速MOSFET驱动器设计的高电流转换为TTL电平信号在电压高达18V的输出。这些设备的投入是TTL兼容，可我们的房协直接驱动，1825ARH脉宽调制器或我们的加勒比国家联盟/青蒿素和HCS/HCTS会类型的逻辑器件。快速崛起时间和高电流输出允许非常快速控制高功率MOSFET栅极电容，像我们的抗辐射FS055，在高频率的应用。高电流输出减少功率损耗通过快速的MOSFET栅极充电和放电电容。输出级采用了低电压锁出电路，放进一个三态模式输出当电源电压下降为低于10V房协，4

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