| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms The MPC2104/5/6/7 are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. These products utilize synchronous or asynchr | MOTOROLA 摩托罗拉 | |||
256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms The MPC2104P (256KB) and MPC2105P (512KB) are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. All of these cache m | MOTOROLA 摩托罗拉 | |||
3V AM/FM 1 CHIP TUNER IC (FOR DIGITAL TUNING SYSTEM) TA2104BN, TA2104BFN are AM/FM 1 chip tuner ICs, which are designed for portable Radios and 3V Head phone Radios. | TOSHIBA 东芝 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX |
HS2104芯片相关品牌
HS2104规格书下载地址
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HS2104数据表相关新闻
HS3001
HS3001
2023-6-13HS1T24SA 拇指操纵杆,2 - 轴 数字(机械开关) 输出
HS1T24SA
2023-3-20HS1-6664RH-8 可擦除可编程ROM
HS1-6664RH-8 可擦除可编程ROM
2020-10-30HS2264A-R4
HS2264A-R4,当天发货0755-82732291全新原装现货或门市自取.
2020-10-1HS2241P
HS2241P,全新原装当天发货或门市自取0755-82732291.
2019-3-11HS-2100RH-抗辐射高频半桥驱动
抗辐射高频半桥驱动 该辐射2100RH硬化HS是一个高频率,半桥100V的N沟道MOSFET驱动器IC,这是一个功能,引脚到引脚Intersil的HIP2500更换和行业标准2110种。低端和 高边栅极驱动器可以独立控制。这给出了在死区时间选择用户最大的灵活性和驱动程序的协议。此外,该器件具有片上错误检测和校正电路,可监控的高端的状态闩锁并比较它的显信号。如果他们不同意,一设置或复位脉冲生成正确的高侧闩锁。此功能保护的高一边,从特修斯闩锁。在高侧欠压供应部队,何低。当这返回一个有效的供应电压,议员将前往国家显。在低侧电源欠压部队既劳和HO低。当该供应变得有效,劳返
2013-3-3
DdatasheetPDF页码索引
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