Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly.

Silicon Schottky Barrier Diode for Rectifying

• Low forward voltage drop and suitable for high effifiency rectifying.\n• DO-214 is suitable for high density surface mounting and high speed assembly.;

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly.

Silicon Schottky Barrier Diode for Rectifying

HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

SCHOTTKY BARRIER RECTIFIERS(5.0A,20-60V)

N-CHANNEL MOS FET 5-PIN 2 CIRCUITS

The µPA502T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complement to µPA503T • Automatic mounting supported

Clamping, Low-Gain Op Amp with Fast 14-bit Settling

文件：397.33 Kbytes Page：6 Pages

Clamping, Low-Gain Op Amp with Fast 14-bit Settling

文件：397.33 Kbytes Page：6 Pages