Silicon Schottky Barrier Diode for Rectifying

Features • Good for high-frequency rectify. • LRP structure ensures higher reliability.

Silicon Schottky Barrier Diode for Rectifying

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as s • 100A, 55V (See Note)\n• Low On-Resistance, rDS(ON) = 0.008Ω\n• Temperature Compensating PSPICE® Model\n• Thermal Impedance SPICE Model\n• UIS Rating Curve\n• Related Literature\n   - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”;

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

isc N-Channel MOSFET Transistor

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