Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM(8-kword x 8-bit)

HN58X24xx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also hav

Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM(8-kword x 8-bit)

HN58X24xx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also hav

Two-wire serial interface 8k EEPROM (1-kword 횞 8-bit)/16k EEPROM (2-kword 횞 8-bit) 32k EEPROM (4-kword 횞 8-bit)/64k EEPROM (8-kword 횞 8-bit)

文件：145.77 Kbytes Page：21 Pages

Two-wire serial interface 8k EEPROM (1-kword x 8-bit)/16k EEPROM (2-kword x 8-bit)/32k EEPROM (4-kword x 8-bit)/64k EEPROM(8-kword x 8-bit)

Description HN58X24xxI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. The

Two-wire serial interface 8k EEPROM (1-kword 횞 8-bit)/16k EEPROM (2-kword 횞 8-bit) 32k EEPROM (4-kword 횞 8-bit)/64k EEPROM (8-kword 횞 8-bit)

Description HN58X24xxI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. The

Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM

Description HN58X24xx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They

Memory

Two-wire serial interface 8k EEPROM (1-kword 횞 8-bit)/16k EEPROM (2-kword 횞 8-bit) 32k EEPROM (4-kword 횞 8-bit)/64k EEPROM (8-kword 횞 8-bit)

文件：145.77 Kbytes Page：21 Pages

Memory-EEPROM