HN1B01FDW价格

参考价格:¥0.2037

型号:HN1B01FDW1T1G 品牌:ON 备注:这里有HN1B01FDW多少钱,2024年最近7天走势,今日出价,今日竞价,HN1B01FDW批发/采购报价,HN1B01FDW行情走势销售排行榜,HN1B01FDW报价。
型号 功能描述 生产厂家&企业 LOGO 操作

ComplementaryDualGeneralPurposeAmplifierTransistorPNPandNPNSurfaceMount

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−F

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryDualGeneralPurposeAmplifierTransistorPNPandNPNSurfaceMount

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−F

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryDualGeneralPurposeAmplifierTransistor

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating ♦HumanBodyModel:3A ♦MachineModel:C •SPrefixforAutomo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Audio-FrequencyGeneral-PurposeAmplifierApplications

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNEpitaxialType(PCTProcess)Audio-FrequencyGeneral-PurposeAmplifierApplications

文件:364.15 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

HN1B01FDW产品属性

  • 类型

    描述

  • 型号

    HN1B01FDW

  • 功能描述

    两极晶体管 - BJT 200mA 60V Dual

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-6-12 18:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
23+
SC-74
6850
只做原装正品现货或订货!假一赔十!
ON
0132+
SC-74
457
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
17+
SC74
6000
进口原装正品假一赔十,货期7-10天
三年内
1983
纳立只做原装正品13590203865
ON
24+
SC74-6
30000
只做原装正品,假壹罚拾!
ONSEMICON
21+
35200
一级代理/放心采购
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON
23+
SC-74
2957
原厂原装正品
onsemi(安森美)
23+
SC-74
3022
原厂订货渠道,支持BOM配单一站式服务
onsemi
24+
SC-74,SOT-457
30000
晶体管-分立半导体产品-原装正品

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