| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HMSB124 | Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 |   | |
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
Shielded Power Inductor??Low Cost Type 文件：435.11 Kbytes Page：6 Pages | HMSEMI 华之美半导体 | | ||
PNP SILICON BIAS RESISTOR TRANSISTOR This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The | ONSEMI 安森美半导体 | | ||
NPN SILICON BIAS RESISTOR TRANSISTOR Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit | ONSEMI 安森美半导体 | | ||
Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switch ing, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features: | NTE | | ||
PNP resistor-equipped transistor DESCRIPTION PNP resistor-equipped transistor in a SC-59 plastic package. NPN complement: PDTC124EK. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space | PHILIPS 飞利浦 | | ||
丝印代码：-05；PNP resistor-equipped transistor DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC124ET. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space | PHILIPS 飞利浦 | |
HMSB124规格书下载地址
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