型号 功能描述 生产厂家 企业 LOGO 操作
HMS200N04D

N-Channel Super Trench Power MOSFET

文件:470.91 Kbytes Page:5 Pages

HMSEMI

华之美半导体

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04 series MOSFETs is a new technology, which combines an innovative super junct

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04G series MOSFETs is a new technology, which combines an innovative super junc

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04Q uses advanced trench technology and design to provide excellent RDS(ON) wit

ADV

爱德微

N-Channel Power MOSFET N-Kanal Leistungs-MOSFET

Features Low profile, space saving package Standard Level Gate Driver Low on state resistance Fast switching times Low gate charge Avalanche rated Compliant to RoHS (exemp. 7a) REACH, Conflict Minerals 1)

Diotec

德欧泰克

N-Channel Enhancement Mode Power Mosfet

文件:4.132149 Mbytes Page:7 Pages

FOSTER

福斯特半导体

更新时间:2025-11-23 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HANBIT
25+
NA
880000
明嘉莱只做原装正品现货
LEM
2025+
SENSOR
4120
代理品牌绝对最新到货
LEM
2018+
550
NK/南科功率
2025+
DFN5X6-8L
986966
国产
LEM
23+
550
全新原装正品现货,支持订货
LEM
23+
SENSOR
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
LEM
2022+
550
原厂原装,假一罚十
HANBIT
24+
SMD
3000
全新原装现货 优势库存
LEM/莱姆
24+
SENSOR
1000
只做原装,欢迎询价,量大价优

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