12 AMPERE NPN SILICON POWER TRANSISTOR

Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits. Specification Features • VCEO(sus)=400V • Reverse Bi

TO-220AB Bipolar Transistor

High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology fo

Series 0517 Pin-Line Vertisocket w/Collet Contacts

FEATURES • Mount components, jumpers, etc., at right angle to PC board • Available in 1 to 25 positions; cuttable to any number desired

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 Computer Switch Power Supply

Nytyes® with Stainless Steel Locking Device

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Nytyes® with Stainless Steel Locking Device

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