HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

4 引脚半间距微型扁平光电晶体管光耦合器 （不建议用于新设计。新的对等零件编号为 FODM217x）

HMHA281、HMHA2801 系列包括一个砷化镓红外发光二极管，用以驱动紧凑型 4 引脚微型扁平封装中的硅光电晶体管。 引线间距为1.27mm。 • Compact 4−Pin Package: ♦2.4 mm Maximum Standoff Height ♦Half−Pitch Leads for Optimum Board Space Savings\n• Safety and Regulatory Approvals:♦ UL1577, 3.750 VACRMS for 1 Minute ♦DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage\n• These Devices are Pb−Free and are RoHS Compliant;

Half Pitch Mini-Flat Package 4-Pin Optocouplers

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4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers

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HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

Schottky Barrier Diodes

FEATURES • Integrated protection ring against static    discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified • Material categorization: for definitions of compliance    please see www.vishay.com/doc?99912 APPLICATIONS

PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

1036- 횞 1010-pixel ccd image sensor

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Low Dropout 1 Ampere Linear Regulator Family

文件：102.7 Kbytes Page：10 Pages

Low Dropout 1 Ampere Linear Regulator Family

文件：102.7 Kbytes Page：10 Pages