650V /75A Trench Field Stop IGBT

文件：1.1204 Mbytes Page：7 Pages

丝印代码：DTQ75N65GN；180mΩ, 650V GaN HEMT With Integrated Driver and Protection

• 650V enhancement mode HEMT with integrated driver • 180mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz operation 2.0 To

丝印代码：DTQ75N65GS；SUPERIOR GaN DTQ75N65GS – 180mΩ, 650V GaN HEMT

• 650V, 180mΩenhancement mode power HEMT • Adapt to various PWM controllers • Zero reverse recovery • Adjustable turn-on slew rate • High switching frequency (>2MHz) • Reverse conduction capable • Enhanced thermal performance with NC center pad • Simple and low cost interface circuit • Dir

SUPERIOR GaN DTQ75N65GS – 180mΩ, 650V GaN HEMT

• 650V, 180mΩenhancement mode power HEMT • Adapt to various PWM controllers • Zero reverse recovery • Adjustable turn-on slew rate • High switching frequency (>2MHz) • Reverse conduction capable • Enhanced thermal performance with NC center pad • Simple and low cost interface circuit • Dir

丝印代码：HMS75N65T；N-Channel Super Junction Power MOSFET

文件：491.84 Kbytes Page：6 Pages