GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

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封装/外壳：模具 包装：托盘 描述：IC RF AMP VSAT 0HZ-30GHZ DIE RF/IF，射频/中频和 RFID 射频放大器

GaAs、PHEMT、MMIC、1/2 W功率放大器芯片或功率放大器，DC至28 GHz或30 GHz

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC MMIC AMP PHEMT 32SMD RF/IF，射频/中频和 RFID 射频放大器

GaAs pHEMT MMIC功率放大器，DC - 28 GHz

GaAs pHEMT MMIC POWER AMPLIFIER

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N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • VHF a

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance Applications Input- and mixer stages especially VHF TV-tuners.  

Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners)

● For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance Applications Input- and mixer stages especially VHF TV-tuners.  

L638xE application guide

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