GaAspHEMTMMIC0.5WATTPOWERAMPLIFIER,DC-30GHz

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封装/外壳：模具 包装：托盘 描述：IC RF AMP VSAT 0HZ-30GHZ DIE RF/IF，射频/中频和 RFID 射频放大器

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC MMIC AMP PHEMT 32SMD RF/IF，射频/中频和 RFID 射频放大器

GaAspHEMTMMICPOWERAMPLIFIER

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N-channeldual-gateMOS-FET

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsource andsubstrate. FEATURES •Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS •VHFa

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance Applications Input-andmixerstagesespeciallyVHFTV-tuners.  

SiliconNChannelMOSFETTetrode(ForVHFapplications,especiallyforinputandmixerstageswithawidetuningrange,e.g.inCATVtuners)

●ForVHFapplications,especiallyforinputandmixerstageswithawidetuningrange,e.g.inCATVtuners

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features Integratedgateprotectiondiodes Highcrossmodulationperformance Lownoisefigure HighAGC-range Lowfeedbackcapacitance Lowinputcapacitance Applications Input-andmixerstagesespeciallyVHFTV-tuners.  

L638xEapplicationguide

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