3 W SPDT T/R开关，采用SMT封装，DC - 3 GHz

HMC595(E)是一款低成本SPDT开关，采用6引脚SOT26封装，适合于高射入功率电平下需要极低失真性能的发射/接收应用。 该器件可控制DC至3 GHz信号，尤其适合蜂窝/3G基础设施、WiMAX和WiBro应用，典型插入损耗仅为0.3 dB。 该设计在+8 V偏置时提供3 W功率处理性能和+65 dBm三阶交调截点。 “关断”状态下，RF1和RF2反射短路。 控制输入A和B兼容CMOS和一些TTL逻辑系列。 这些产品为在形式、装配和功能方面可替代HMC195(E)，同时提供出色的电气性能。\n\n应用\n\n• 蜂窝/3G基础设施 \n\n• 专用移动无线手机\n\n• WLAN、WiM • 低插入损耗： 0.3 dB \n\n• 高输入IP3： +65 dBm \n\n• 隔离： 30 dB;

封装/外壳：SOT-23-6 包装：散装 描述：IC RF SWITCH SPDT 3GHZ SOT26 RF/IF，射频/中频和 RFID 射频开关

GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz

文件：231.85 Kbytes Page：8 Pages

GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz

文件：343.09 Kbytes Page：8 Pages

GaAs MMIC 3 W T/R 开关 DC - 3 GHz

HMC595A和HMC595AE均为低成本SPDT开关，采用6引脚SOT26封装，适用于在高入射功率电平下具有极低失真特性的发射/接收应用。 该器件可控制DC至3 GHz信号，尤其适合蜂窝/3G基础设施、WiMAX和WiBro应用，典型插入损耗仅为0.3 dB。 该设计在+8 V偏置下提供3 W的功率处理能力和+63 dBm的三阶交调截点。 “关断”状态下，RF1和RF2反射短路。 控制输入A和B兼容CMOS和一些TTL逻辑系列。 这些产品在形式、装配和功能方面可替代HMC595和HMC595E，同时提供出色的电气性能。 • 低插入损耗： 0.3 dB \n\n• 高输入IP3： +63 dBm \n\n• 隔离： 30 dB;

GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz

文件：231.85 Kbytes Page：8 Pages

GaAs MMIC 3 WATT T/R SWITCH DC - 3 GHz

文件：879.53 Kbytes Page：8 Pages

丝印代码：H595A；GaAs MMIC 3 WATT T/R SWITCH DC - 3 GHz

文件：371.56 Kbytes Page：6 Pages

丝印代码：595AE；GaAs MMIC 3 WATT T/R SWITCH DC - 3 GHz

文件：371.56 Kbytes Page：6 Pages

封装/外壳：SOT-23-6 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SPDT 3GHZ SOT26 RF/IF，射频/中频和 RFID 射频开关

GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz

GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz

文件：231.85 Kbytes Page：8 Pages

GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz

文件：343.09 Kbytes Page：8 Pages

Silicon Diode, Dual, Common Cathode, High Speed

Description: The NTE595 consists of two silicon diodes in an SOT–23 type surface mount package. The cathodes are common and the device is intended for high–speed switching applications in thick and thin–film circuits.

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    

RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS

DESCRIPTION The SD1732 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposes. FEATURES SUMMARY ■ 470 - 860 MHz ■ 25 VOLTS ■ CLASS A PUSH PULL ■ DE