GaAs MMIC T/R SWITCH, DC - 4.0 GHz

General Description The HMC544 & HMC544E are low cost SPDT switches in 6-lead SOT26 packages for use in transmit-receive applications which require very low insertion loss at medium power levels. These devices can control signals from DC to 4.0 GHz and are especially suited for 450, 900, 19

GaAs MMIC T/R SWITCH, DC - 4 GHz

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封装/外壳：SOT-23-6 包装：卷带（TR） 描述：IC RF SWITCH SPDT 4GHZ SOT26 RF/IF，射频/中频和 RFID 射频开关

GaAs MMIC T/R SWITCH, DC - 4.0 GHz

封装/外壳：SOT-23-6 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SPDT 4GHZ SOT26 RF/IF，射频/中频和 RFID 射频开关

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

UHF power MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. A marking code showing gate-source voltage (VGS) information is provided for matched pair applications. FEATURES •

UHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the